Yinggang Li
Ericsson AB, Ericsson Research, Sweden
Harald Jacobsson
Ericsson AB, Ericsson Research, Sweden
Mingquan Bao
Ericsson AB, Ericsson Research, Sweden
Thomas Lewin
Ericsson AB, Ericsson Research, Sweden
Ladda ner artikel
Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:6, s.
Publicerad: 2003-11-06
ISBN:
ISSN: 1650-3686 (tryckt), 1650-3740 (online)
After a brief discussion of the recent development of SiGe HBT technology; the state-of-the-art achievement of the technology in circuits implementation is reviewed from an applied perspective; focusing on microwave and mm-wave applications. In particular; the performance of SiGe HBT-based oscillator and receiver front-end Ics are presented and relevant industry issues are addressed.
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[2] M. Bao; H. Jacobsson and Y. Li; "22/44-GHzBalanced Colpitts VCO in SiGe Technology"; to be submitted; 2003
[3] S. P. Voinigescu; D. Marchesan and M. A. Copeland;"A Family of Monolithic Inductor-Varactor SiGe-HBT VCOs for 20GHz to 30GHz LMDS and Fiber-Optic Receiver Applications;" 2000 IEEE RFIC Symp. Dig.; pp.173-177; June 2000
[4] H. Li and H-M. Rein; "Millimeter-Wave VCOs with Wide Tuning Range and Low Phase Noise; Fully Integrated in a SiGe Bipolar Production Technology";J. of Solid-State Circuits; Vol. 38; No. 2; pp.184-191; 2003
[5] H. Li and H-M. Rein; "47GHz VCOs with Low Phase Noise Fabricated in a SiGe Bipolar Production Technology"; IEEE Microwave & Wireless Component Letts.; Vol. 12; No. 3; pp.79-81; 2002
[6] S. Hackl; et al.; "A 28GHz Monolithic Integrated Quadrature Oscillator in SiGe Bipolar Technology;" J. of Solid-State Circuits; vol. 38; No. 1; pp.135-137; 2003
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[8] G. Schuppener; T. Harada and Y. Li; "A 23-GHz Low- Noise Amplifier in SiGe Heterojunction Bipolar technology"; 2001 IEEE RFIC Symp. Dig.; pp.177- 180; May 2001
[9] Y. Li; M. Bao; M. Ferndahl and A. Cathelin; "23GHz Front-end Circuits in SiGe BiCMOS Technology;" 2003 IEEE RFIC Symp. Dig.; Philadelphia; June 2003
[10] J. Böck; et al.; "Sub 5ps SiGe Bipolar Technology"; 2002 IEDM Technical Digest; Dec. 2002
[11] D. R. Greenberg; et al.; "Noise Performance of a Low Base Resistance 200 GHz SiGe technology"; 2002 IEDM Technical Digest; Dec. 2002
[12] M. Bao; Y. Li and A. Cathelin; "20-30GHz Activemixers in SiGe BiCMOS Technology"; to be submitted; 2003
[13] E. Sönmez; et al; "A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process;" 2002 IEEE RFIC Symp. Dig.; pp.159-162; June 2002
