Magnus Andersson
Microwave Electronics Lab., Dept of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Lars Dillner
Zarlink Semiconductor AB, Sweden
Herbert Zirath
Microwave Electronics Lab., Dept of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
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Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:78, s.
Publicerad: 2003-11-06
ISBN:
ISSN: 1650-3686 (tryckt), 1650-3740 (online)
The integration of an optical detector with a transimpedance amplifier (TIA) is a very attractive solution for high speed fiber optical communication links. This article presents our studies of the possibility of integrating a Metal-Semiconductor-Metal (MSM) detector on the same material structure as used for commercial HEMT-MMICs. Future applications such as 10 Gb/s fiber optical links are investigated. The first generation MSM detectors were fabricated for proof-of-concept. The DC and RF responsitivity at 850 nm wavelength was measured as a function of bias-voltage. A DCresponsitivity of approximately 0.5 A/W and a bandwidth above 2 GHz was achieved for an applied voltage of 10 V. An electrical model was extracted from S-parameter and DC-measurements.
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