Anders Mellberg
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Per-åke Nilsson
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Niklas Rorsman
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Jan Grahn
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Herbert Zirath
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:17, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
InP-based HEMT technology presents substantial performance advantages for millimeter wave applications such as high-speed wireless communications; radio astronomy; and radar. We report on the development of a 50-nm gate-length process for millimeter wave InP HEMTs. The gate patterns were defined using a single electron beam exposure and a bi-layer resist system. The process was evaluated on pseudomorphic InAlAs/InGaAs/InP HEMT material. A two-finger; 100 µm gate-width device showed an extrinsic DC peak transconductance of 650 mS/mm at Vds = 1.0 V. At the same drain bias; the transit frequency and the maximum frequency of oscillation were 180 and 230 GHz respectively. The developed 50-nm process constitutes the new baseline for the InP MMIC process at the Microwave Electronics Laboratory at Chalmers.
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