Vincent Desmaris
Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers Univeristy of Technology, Sweden
Joakim Eriksson
Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers Univeristy of Technology, Sweden
Niklas Rorsman
Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers Univeristy of Technology, Sweden
Herbert Zirath
Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers Univeristy of Technology, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:34, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
Using our in-house 0.3 µm mushroom gate process; AlGaN/GaN high electron mobility transistors (HEMTs) with total gate periphery up to 0.6 mm were fabricated and characterized. The transistors were processed on an AlGaN/GaN heterostructure grown by MBE on sapphire. Output current densities up to 1 A/mm and extrinsic DC-transconductances (gm) of 240 mS/mm were measured. Extrinsic cut-off frequencies (ft) of 35 GHz; maximum frequencies of oscillation (fmax) of 75 GHz; were calculated from S-parameters measurements. On wafer Load-Pull measurements were performed without any active cooling on HEMTs of different sizes. Continuous wave (CW) output power densities up to 3.2 W/mm at 6 dB compression and 1.9 W/mm at 3 dB compression at 6 GHz were achieved.
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