Mattias Ingarson
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Arne Olsen Øistein
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Erik Kollberg
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Jan Stake
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
Download article
Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:63, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
We report on the design; modelling and analysis of heterostructure barrier varactor (HBV) frequency quintuplers with output frequencies in the sub-millimetre wave region. The HBV is a symmetric varactor; thus only odd harmonics are generated and no DC bias is required. By incorporating several barriers in the device; the HBV is also capable of handling higher power levels than conventional varactors. This makes the HBV superior to the conventional Schottky varactor for high order frequency multiplier circuits. We present analytical models; which can be used to calculate parameters such as optimum doping concentration; layer structure; device area and series resistance for HBVs; as well as to predict the performance with respect to conversion efficiencies and output power levels. These parameters are then further optimised by harmonic balance simulations in commercial microwave EDA tools; for which we have developed accurate device models. We investigate the influence of embedding impedance levels for optimum conversion efficiency by means of analytical expressions and harmonic balance simulations. Theoretical calculations predict a maximum diode conversion efficiency to 500 GHz for a planar; six-barrier InGaAs HBV of more than 30 %.
[1] E. L. Kollberg and A. Rydberg; “Quantum-barrier-varactor diode for high efficiency millimeter-wave multipliers”; Electronics Letters; vol. 25; pp. 1696-1697; 1989.
[2] J. Stake; L. Dillner; S. H. Jones; C. M. Mann; J. Thornton; J. R. Jones; W. L. Bishop and E. L. Kollberg; “Effects of Self-Heating on Planar Heterostructure Barrier Varactor Diodes”; IEEE Transactions on Electron Devices; vol. 45; pp. 2298-2303; 1998.
[3] X. Mélique; A. Maestrini; E. Lheurette; P. Mounaix; M. Favreau; O. Vanbésien; M. Goutoule; G. Beaudin; T. Nähri and D. Lippens; “12% efficiency and 9.5 dBm output power from InP based heterostructure barrier varactor triplers at 250GHz”; IEEE MTT-S International Microwave Symposium. Digest; Anaheim; pp. 123-126; 1999.
[4] J. Stake; S. H. Jones; L. Dillner S. Hollung and E. L. Kollberg; “Heterostructure Barrier Varactor Design”; IEEE Transactions on Microwave Theory and Techniques; vol. 48; pp. 677-682; 2000.
[5] M. Sotoodeh; A. H. Khalid; and A. A. Rezazadeh; “Empirical low-field mobility model for III-V compounds applicable in device simulation codes”; Journal of Applied Physics; vol. 87; no. 6; pp. 2890-2900; 2000.
[6] B. Alderman; J.Stake; L. Dillner; D. P. Steenson; M. Ingvarson; E. Kollberg; C. Mann and J. Chamberlain; ”A New Pillar Geometry for Heterostructure Barrier Varactor Diodes”; Twelfth International Symposium on Space Terahertz Technology; 2001.
[7] E. L. Kollberg; J. Stake and L. Dillner; “Heterostructure barrier varactors at submillimetre waves”; Phil. Trans. R. Soc. Lond. vol. 354; pp. 2383-2398; 1996.
[8] L. Dillner; J. Stake and E. L. Kollberg; “Modeling of the Heterostructure Barrier Varactor Diode”; 1997 International Semiconductor Device Research Symposium; Charlottesville; pp. 179-182; 1997.
